Samsung 850 Evo Series 1TB SATA III Internal Solid State Drive (MZ-75E1T0BW)

Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilising unused PC memory (DRAM) as cache storage.

What is 3D V-NAND and how does it differ from existing technology?
Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utiliSing a smaller footprint.

OptimiSe daily computing with TurboWrite technology for unrivalled read/write speeds
Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520 MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario. * PCmark7 (250 GB ): 6,700 (840 EVO) > 7,600 (850 EVO) ** Random Write (QD32, 120 GB): 36,000 IOPS (840 EVO) > 88,000 IOPS (850 EVO)

Get into the fast lane with the improved RAPID mode
Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilising unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth. * PCMARK7 RAW (250 GB): 7,500 > 15,000 (Rapid mode)

Guaranteed endurance and reliability bolstered by 3D V-NAND technology
The 850 EVO delivers guaranteed endurance and reliability by doubling the T BW* compared to the previous generation 840 EVO** backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices***. * TBW: Total Bytes Written ** TBW: 43 (840 EVO) > 75 (850 EVO 120/250 GB),150 (850 EVO 500/1 TB) *** Sustained Performance (250 GB): 3300 IOPS (840 EVO) > 6500 IOPS (850 EVO), Performance measured after 12 hours “Random Write” test

Compute longer with improved energy efficiency backed by 3D V-NAND
The 850 EVO delivers significantly longer battery life on your notebook with a controller optimised for 3D V-NAND now enabling Device Sleep at a highly efficient 2mW. The 850 EVO is now 25% more power efficient to the 840 EVO during write operations* thanks to 3D V-NAND only consuming half the energy than that of Planar 2D NAND. * Power (250 GB): 3.2 Watt (840 EVO) > 2.4 Watt (850 EVO)

Secure valuable data
The 850 EVO comes fortified with the latest hardware-based full disk encryption engine.

Protect against overheating
The 850 EVO’s Dynamic Thermal Guard constantly monitors and maintains ideal temperatures for the drive to operate in optimal conditions for the integrity of your data.

Level up to 850 EVO without any hassle
In three simple steps the Samsung’s One-stop Install Navigator software easily allows you to migrate all the data and applications from the existing primary storage to the 850 EVO.

Acquire an integrated in-house solution
Samsung is the only SSD brand to design and manufacture all its components in-house allowing complete optimised integration.

Technical Detais

Brand :  Samsung
Model : MZ-75E1T0BW
Application  :  Client PCs
Form Factor  :  2.5 inch Form Factor
Interface  : SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
Dimension (WxHxD)  :  100.00 x 69.85 x 6.80 mm Dimension
Weight  :  Max 66 g Weight
Storage Memory  :  Samsung 32 layer 3D V-NAND
Controller  :  Samsung MEX Controller
Cache Memory  :  Samsung 1 GB Low Power DDR2 SDRAM
Capacity  :  1,000 GB (1 GB=1 Billionbyte by IDEMA)

Special Feature
TRIM Support  :  TRIM Supported
S.M.A.R.T Support  :  S.M.A.R.T Supported
GC (Garbage Collection)  :  Auto Garbage Collection Algorithm
WWN Support :  World Wide Name supported
Device Sleep Mode Support  : Yes

Encryption Support
AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive)

Performance
Sequential Read  :  Up to 540 MB/seconds Sequential Read
Sequential Write  :  Up to 520 MB/seconds Sequential Write
Random Read (4KB, QD32)  :  Up to 98,000 IOPS Random Read
Random Write (4KB, QD32)  : Up to 90,000 IOPS Random Write
Random Read (4KB, QD1)  :  Up to 10,000 IOPS Random Read
Random Write (4KB, QD1)  :  Up to 40,000 IOPS Random Write
Environment   :  Average Power Consumption (system level)

Environment
Power consumption (Idle)  :  Max. 50 m watts
Allowable Voltage  : 5V ± 5% Allowable voltage
Reliability (MTBF)  :  1.5 Million hours Reliability (MTBF)
Shock  :  1,500 G & 0.5 ms (Half sine)

Software
Management SW  :  Magician Software for SSD management